Product Summary

The MG50Q6ES50A is a GTR module. It is suitable for high power swtiching applications and motor control applications.

Parametrics

MG50Q6ES50A absolute maximum ratings: (1)collector emitter voltage, VCES: 1200V; (2)gate-emitter voltage, VGES: ±20V; (3)collector current, IC: 50A; (4)forward current, IF: 50A; IFM: 100A; (5)collector power dissipation, PC: 350W; (6)junction temperature, Tj: 150℃; (7)storage temperature range, Tstg: -40 to 125℃; (8)isolation voltage, Visol: 2500V.

Features

MG50Q6ES50A features: (1)the electrodes are isolated from case; (2)high input impedance; (3)6 IGBTs built into 1 package.

Diagrams

MG50Q6ES50A block diagram

MG50Q2YS40
MG50Q2YS40
Other

Data Sheet
Negotiable