Product Summary
The IRF7306TRPBF is a HEXFET power MOSFET, which is also a kind of international rectifier. The IRF7306TRPBF utilizes advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that the IRF7306TRPBF well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications.
Parametrics
IRF7306TRPBF maximum ratings: (1)Power Dissipation: 2.0 W; (2)Linear Derating Factor: 0.016 W/℃; (3)Gate-to-Source Voltage: ±20 V; (4)Peak Diode Recovery dv/dt; -5.0 V/ns; (5)TSTG Junction and Storage Temperature Range: -55 to + 150℃; (6)Pulsed Drain Current: -14A.
Features
IRF7306TRPBF features: (1)Generation V Technology; (2)Ultra Low On-Resistance; (3)Dual P-Channel Mosfet; (4)Surface Mount; (5)Available in Tape and Reel; (6)Dynamic dv/dt Rating; (7)Fast Switching.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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IRF7306TRPBF |
International Rectifier |
MOSFET MOSFT DUAL PCh -30V 3.6A |
Data Sheet |
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Quantity | |||||||||||||
IRF710 |
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IRF710, SiHF710 |
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IRF7101TR |
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