(China (Mainland))
Product Summary
The GT15Q101 is an insulated gate bipolar transistor. It is suitable for high power switching applicatiosn and motor control applications.
Parametrics
GT15Q101 absolute maximum ratings: (1)collector-emitter voltage, VCES: 1200V; (2)gate-emitter voltage, VGES: ±20V; (3)collector current, IC: 15A; ICP: 30A; (4)collector power dissipation, PC: 150W; (5)junction temeprature, Tj: 150℃; (6)storage temeprature range, Tstg: -55 to 150℃.
Features
GT15Q101 features: (1)high input impedance; (2)high speed; (3)low saturation voltage; (4)enhancement mode.
Diagrams
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Data Sheet |
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GT15J301 |
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Data Sheet |
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IGBT Transistors IGBT, 600V, 15A |
Data Sheet |
Negotiable |
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GT15J311(Q) |
Toshiba |
IGBT Transistors IGBT, 600V, 15A |
Data Sheet |
Negotiable |
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