(China (Mainland))
Product Summary
The FF400R12KE3 is an IGBT-Module.
Parametrics
FF400R12KE3 maximum rated values: (1)collector-emitter voltage VCES: 1200 V; (2)IC,nom.: 400 A; (3)DC-collector current IC: 580 A; (4)repetitive peak collector current ICRM: 800 A; (5)total power dissipation Ptot: 2000 W; (6)gate-emitter peak voltage VGES: +/- 20 V.
Features
FF400R12KE3 characteristic values: (1)VCE sat: 1.70 to 2.15 V; (2)collector-emitter saturation voltage: 2.00 V; (3)gate threshold voltage: 5.0 to 6,5 V; (4)input capacitance Cies: 1.10 nF; (5)collector-emitter cut-off current ICES: 5.0 mA; (7)gate-emitter leakage current IGES: 400 nA.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 FF400R12KE3 |
Infineon Technologies |
IGBT Modules 1200V 400A DUAL HALF BRIDGE |
Data Sheet |
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FF400R12KE3_B2 |
Infineon Technologies |
IGBT Modules N-CH 1.2KV 580A |
Data Sheet |
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