Product Summary

The C5696 is an NPN Triple Diffused Planar Silicon Transistor. It is suitable for Color TV Horizontal Deflection Output Applications.

Parametrics

C5696 absolute maximum ratings: (1)Collector-to-Base Voltage VCBO: 1600 V; (2)Collector-to-Emitter Voltage VCEO: 800 V; (3)Emitter-to-Base Voltage VEBO: 5V; (4)Collector Current IC: 12 A; (5)Collector Current (Pulse) ICP: 36 A; (6)Collector Dissipation PC: 3.0 W; (7)Junction Temperature Tj: 150℃; (8)Storage Temperature Tstg: -55 to +150℃.

Features

C5696 features: (1)High speed; (2)High breakdown voltage(VCBO=1600V); (3)High reliability(Adoption of HVP process); (4)Adoption of MBIT process; (5)On-chip damper diode.

Diagrams

C5696 test circuit