(China (Mainland))
Product Summary
The BLW75 is the NPN silicon RF power transistor which is Designed for 25V Large-Signal Amplifier Applications, TV Transposers,and Transmitters Operating in Band lll.
Parametrics
BLW75 absolute maximum ratings: (1)IC: 4.0 A; (2)VCE: 32 V; (3)VCB: 60 V; (4)PDISS: 60 W @ TC = 25℃; (5)TJ: -65 to +200℃; (6)TSTG: -65 to +125℃; (7)θJC: 1.9 ℃/W.
Features
BLW75 characteristics: (1)BVCER, IC = 50 mA, RBE = 10Ω: 60 V; (2)BVCBO, IC = 50 mA: 60 V; (3)BVCEO, IC = 50 mA: 30 V; (4)BVEBO, IE = 10 mA: 4.0 V; (5)h FE, VCE = 25 V, I = 2.0 A: 20 min, 45 typ.
Diagrams
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 BLW75 |
Other |
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Data Sheet |
Negotiable |
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BLW75 |
Other |
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Data Sheet |
Negotiable |
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BLW77 |
Advanced Semiconductor, Inc. |
Transistors RF Bipolar Power RF Transistor |
Data Sheet |
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BLW78 |
Other |
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Data Sheet |
Negotiable |
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BLW76 |
TriQuint Semiconductor |
Transistors RF Bipolar Power RF Bipolar Trans |
Data Sheet |
Negotiable |
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