(China (Mainland))
Product Summary
The BC213159A20-RK-E4 is a PNP silicon amplifier transistor.
Parametrics
BC213159A20-RK-E4 absolute maximum ratings: (1)Collector–Emitter Voltage VCEO: –30Vdc; (2)Collector–Base Voltage VCBO: –45Vdc; (3)Emitter–Base Voltage VEBO: -5.0 Vdc; (4)Collector Current : 100 mAdc; (5)Total Device Dissipation, PD: 350mW; (6)Operating and Storage Junction Temperature Range, TJ, Tstg: –55to +150℃.
Features
BC213159A20-RK-E4 features: (1)Collector–Emitter Breakdown Voltage, V(BR)CEO: –30Vdc; (2)Collector–Base Breakdown Voltage, V(BR)CBO:–45Vdc; (3)Emitter–Base Breakdown Voltage, V(BR)EBO:–5Vdc; (4)Collector–Emitter Leakage Current, ICBO:–15nAdc; (5)Emitter–Base Leakage Current, IEBO :–15nAdc.
Diagrams
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Fairchild Semiconductor |
Transistors Bipolar (BJT) PNP -50V -100mA HFE/120 |
Data Sheet |
Negotiable |
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BC212_D26Z |
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Transistors Bipolar (BJT) PNP -50V -100mA HFE/120 |
Data Sheet |
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Fairchild Semiconductor |
Transistors Bipolar (BJT) PNP Transistor General Purpose |
Data Sheet |
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BC212_D74Z |
Fairchild Semiconductor |
Transistors Bipolar (BJT) PNP Transistor General Purpose |
Data Sheet |
Negotiable |
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BC212_D75Z |
Fairchild Semiconductor |
Transistors Bipolar (BJT) PNP Transistor General Purpose |
Data Sheet |
Negotiable |
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BC212_J35Z |
Fairchild Semiconductor |
Transistors Bipolar (BJT) GENERAL PURPOSE XTOR |
Data Sheet |
Negotiable |
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